Flash Memory: The New Technology Driver [Sept 3, 2010]
Related information on this blog:
– Continued Toshiba-SanDisk dominance for flash memories [Feb 26, 2012]
New 128Gb Device Ideal for Small Form Factor Tablets, Smartphones, SSDs and High-Performance Compute Devices
- The new 20nm 128Gb MLC NAND device doubles the storage capacity and performance of the companies’ existing 20nm 64Gb NAND device.
- Intel and Micron continue to lead the industry with the most advanced NAND production process technology, announcing mass production of their 20nm 64Gb NAND flash.
- The industry’s first monolithic 128Gb part can store 1 terabit of data in a single fingertip-size package with just eight die-a new storage benchmark that meets the ongoing demand for slim, sleek products.
- The companies’ 20nm NAND is the first to use an innovative planar cell structure that overcomes the scaling constraints of standard floating gate NAND.
Intel and Micron noted that the December production ramp of their 20nm 64Gb NAND flash product will enable a rapid transition to the 128Gb device in 2012. Samples of the 128Gb device will be available in January, closely followed by mass production in the first half of 2012. Achievement of this milestone will further enable greater densities and overall fab output, while also helping the companies’ development teams cultivate the expertise required to design complex storage solutions and refine future technologies.
Intel-Micron Flash Technologies 20nm die— The industry’s first monolithic 128 gigabit (Gb) NAND die represents continued leadership by Intel and Micron on the world’s most advanced 20 nanometer (nm) NAND production process technology. The new 20nm 128Gb device doubles the storage capacity and performance of the companies’ existing 20nm 64Gb NAND device.
World’s Highest-Capacity NAND flash memory die — New 20nm NAND from Intel and Micron provides unprecedented storage density. The industry’s first monolithic 128 gigabit (Gb) part can store 1 terabit of data in a single fingertip-size package with just eight die—a new storage benchmark that meets the ongoing demand for slim, sleek products.
Intel Corporation and Micron Technology, Inc., today announced a new benchmark in NAND flash technology – the world’s first 20 nanometer (nm), 128 gigabit (Gb), multilevel-cell (MLC) device. The companies also announced mass production of their 64Gb 20nm NAND, which further extends the companies’ leadership in NAND process technology.
Developed through Intel and Micron’s joint-development venture, IM Flash Technologies (IMFT), the new 20nm monolithic 128Gb device is the first in the industry to enable a terabit (Tb) of data storage in a fingertip-size package by using just eight die. It also provides twice the storage capacity and performance of the companies’ existing 20nm 64Gb NAND device. The 128Gb device meets the high-speed ONFI 3.0 specification to achieve speeds of 333 megatransfers per second (MT/s) [will enable a new class of high-performance SSDs by doubling the current NAND interface transfer rates to 400 megabytes per second], providing customers with a more cost-effective solid-state storage solution for today’s slim, sleek product designs, including tablets, smartphones and high-capacity solid-state drives (SSDs.)
“As portable devices get smaller and sleeker, and server demands increase, our customers look to Micron for innovative new storage technologies and system solutions that meet these challenges,” said Glen Hawk, vice president of Micron’s NAND Solutions Group. “Our collaboration with Intel continues to deliver leading NAND technologies and expertise that are critical to building those systems.”
The companies also revealed that the key to their success with 20nm process technology is due to an innovative new cell structure that enables more aggressive cell scaling than conventional architectures. Their 20nm NAND uses a planar cell structure – the first in the industry – to overcome the inherent difficulties that accompany advanced process technology, enabling performance and reliability on par with the previous generation. The planar cell structure successfully breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production.
“It is gratifying to see the continued NAND leadership from the Intel-Micron joint development with yet more firsts as our manufacturing teams deliver these high-density, low-cost, compute-quality 20nm NAND devices,” said Rob Crooke, Intel vice president and general manager of Intel’s Non-Volatile Memory Solutions Group. “Through the utilization of planar cell structure and Hi-K/Metal gate stack, IMFT continues to advance the technological capabilities of our NAND flash memory solutions to enable exciting new products, services and form factors.”
The demand for high-capacity NAND flash devices is driven by three interconnected market trends: data storage growth, the shift to the cloud and the proliferation of portable devices. As digital content continues to grow, users expect that data to be available across a multitude of devices, all synchronized via the cloud. To effectively stream data, servers require high-performance, high-capacity storage that NAND delivers, and storage in mobile devices has consistently grown with increased access to data. High-definition video is one example of an application that requires high-capacity storage, since attempting to stream this type of data can create a poor user experience. These developments create great opportunities for high-performance, small-footprint storage, both in the mobile devices that consume the content and the storage servers that deliver it.
Glen Hawk Interview from 2011 Flash Memory Summit [Aug 17, 2011]
See also: The Alchemy of NAND Flash [FMS2011 keynote presentation PDF by Glen Hawk, Vice President NAND Solutions Group, Micron Technology]
from which it is worth to include picture of 3D NAND which was in the focus of his presentation technologically.
One can understand this even more when looking into: Intel’s SoC strategy strengthened by 22nm Tri-Gate technology [May 10 – Nov 30, 2011] where Intel reliance on 22nm 3-D Tri-Gate Transistor Technology is described.
Micron is one of the world’s leading semiconductor companies. Our DRAM, NAND and NOR Flash memory products are used in everything from computing, networking, and server applications, to mobile, embedded, consumer, automotive, and industrial designs. We’re an innovator and industry leader, developing groundbreaking technologies that transform what’s possible. We’re also a partner with other manufacturers and enablers, making it easier for our customers to try new things and gain competitive advantages in their markets.
We leverage Micron’s global operations to design and manufacture products and support customers around the world. The close coordination of research, manufacturing, and support functions helps us deliver high-quality products that meet our customers’ requirements while achieving low cost production through decreased manufacturing cycle times and increased yields.
The Company has wholly owned wafer fabrication facilities in Boise, Idaho, Manassas, Virginia, Kiryat Gat, Israel, Agrate and Avezzano, Italy, and Singapore; wholly owned assembly and test operations in Boise, Idaho, Xi’an, China, Muar, Malaysia, and Singapore; and memory module assembly operations in Boise, Idaho, Singapore and Aguadilla, Puerto Rico.
IM Flash Technologies (IMFT), Micron’s joint venture with Intel, produces NAND Flash at Micron’s Virginia fabrication facility, as well as the IMFT facility in Lehi, UT which Micron contributed to the joint venture. IM Flash Singapore (IMFS), Micron’s other joint venture with Intel, will be producing NAND Flash in Singapore. Inotera Memories, Micron’s joint venture with Nanya Technology, operates two 300mm DRAM fabrication facilities in Taiwan.
Micron at a Glance
Founded: October 1978, Boise, ID
FY2011 Net Sales: $8.7 billion
NASDAQ Symbol: MU
Employees: ~20,000 worldwide (excludes contractors, temps, and JV employees)
In January 2006, Micron Technology, Inc., one of the world’s leading providers of advanced semiconductor solutions, and Intel Corporation, the world’s largest chip maker, came together to form a new company: IM Flash Technologies, LLC.
IM Flash marries the technology, assets, and experience of two major corporations to manufacture NAND Flash memory—an increasingly important and fast-growing memory technology used in consumer electronics, removable storage, and handheld communication devices.
Manufacturing products exclusively for Micron and Intel, IM Flash combines Micron’s expertise in developing NAND technology and operating highly efficient manufacturing facilities with Intel’s multi-level cell technology and history of innovation in the Flash memory business.
With an uncompromising focus on integrity, execution, and teamwork, and a strong commitment to success, we believe there is no limit to the opportunities ahead. Join us as we help chart the future—apply for a job at our Lehi, Utah facility.
Lexar — A Behind the Scenes Look: How We Make Our Products [Jan 3, 2011] till 1:55 it is the same as the above video as that part is covering the manufacturing of chips for Lexar’s products
Chip Shot: Intel-Micron Win Most Innovative Flash Award [IntelPR, Aug 11, 2011]
Intel Corporation and Micron Technology, Inc., received the Most Innovative Flash Memory Technology award Aug. 10 at the 2011 Flash Memory Summit for the companies’ industry-leading 20 nanometer (nm) NAND Flash memory process technology. The breakthrough technology saves board space enabling tablet and smartphone manufacturers to offer such end-product improvements as a bigger battery, larger screen or another chip to handle new features.
Intel and Micron’s 3-bit-per-cell (3bpc) NAND flash memory has won the EE Times Annual Creativity in Electronics (ACE) Award for Most Popular Memory Product. Designed by the IM Flash Technologies (IMFT) NAND flash joint venture, the 64 gigabit memory device offers improved cost efficiencies for higher storage capacity for USB, SD flash cards and consumer electronics. The ACE Awards celebrate the creators of technology who demonstrate leadership and innovation in the global industry and shape the world we live in.
IM Flash Singapore, LLP was formed in February 2007, by subsidiaries of Micron Technology, Inc. and Intel Corporation. The limited liability partnership primarily manufactures NAND Flash memory – an increasingly important and fast-growing memory technology used in consumer electronics, removable storage and handheld communication devices.
Manufacturing products exclusively for Micron and Intel, IM Flash Singapore, LLP combines Micron’s expertise in developing NAND technology and operating highly efficient manufacturing facilities with Intel’s multi-level cell technology and history of innovation in the Flash memory business.
With an uncompromising focus on integrity, execution, and teamwork, and a strong commitment to success, we believe there is no limit to the opportunities ahead. Join us as we help chart the future—apply for a job at our Singapore facility.
Intel Corporation and Micron Technology, Inc., today expanded their NAND flash memory joint venture operations with the official opening of the IM Flash Singapore fabrication facility. The $US 3 billion state-of-the-art 300 millimeter facility is currently ramping production of the companies’ industry-leading 25 nanometer NAND flash memory and is anticipated to employ more than 1,200 employees.
IM Flash Technologies – Our Manufacturing Process [Nov 11, 2011]
Intel Corporation and Micron Technology Inc. today introduced the most advanced, 20-nanometer (nm) process technology for manufacturing NAND flash memory. Manufactured by IM Flash Technologies (IMFT), the companies’ NAND flash joint venture, the new 20nm 8GB multi-level cell (MLC) NAND flash device provides a high-capacity, small form factor storage option for saving music, video, books and other data on smartphones, tablets and computing solutions such as solid-state drives (SSDs).
The Open NAND Flash Interface (ONFI) Working Group, the organization dedicated to simplifying integration of NAND Flash memory into consumer electronic devices, computing platforms and industrial systems, has introduced the new ONFI 3.0 standard. Intel supports the new specification, which will enable a new class of high-performance SSDs by doubling the current NAND interface transfer rates to 400 megabytes per second.
New 20nm, 8-gigabyte Device Delivers Highest Capacity in Smallest Form Factor for Tablets, Smartphones, SSDs and Other Consumer and Compute Devices
- Intel and Micron deliver industry’s smallest, most advanced NAND flash process technology at 20nm.
- IM Flash Technologies leads the industry with 20nm process and quick transitions of the entire fab network.
- Measuring just 118mm2, the 8GB MLC NAND device provides high capacity for smartphones, tablets, SSDs and more.
Intel Corporation and Micron Technology Inc. today introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND flash device, providing a high-capacity, small form factor storage option for saving music, video, books and other data on smartphones, tablets and computing solutions such as solid-state drives (SSDs).
The growth in data storage combined with feature enhancements for tablets and smartphones is creating new demands for NAND flash technology, especially greater capacity in smaller designs. The new 20nm 8GB device measures just 118mm2and enables a 30 to 40 percent reduction in board space (depending on package type) compared to the companies’ existing 25nm 8GB NAND device. A reduction in the flash storage layout provides greater system level efficiency as it enables tablet and smartphone manufacturers to use the extra space for end-product improvements such as a bigger battery, larger screen or adding another chip to handle new features.
Manufactured by IM Flash Technologies(IMFT), Intel and Micron’s NAND flash joint venture, the new 20nm 8GB device is a breakthrough in NAND process and technology design, further extending the companies’ lithography leadership. Shrinking NAND lithography to this technology node is the most cost-effective method for increasing fab output, as it provides approximately 50 percent more gigabyte capacity from these factories when compared to current technology. The new 20nm process maintains similar performance and endurance as the previous generation 25nm NAND technology.
“Close customer collaboration is one of Micron’s core values and through these efforts we are constantly uncovering compelling end-product design opportunities for NAND flash storage,” said Glen Hawk, vice president of Micron’s NAND Solutions Group. “Our innovation and growth opportunities continue with the 20nm NAND process, enabling Micron to deliver cost-effective, value-added solid-state storage solutions for our customers.”
“Our goal is to enable instant, affordable access to the world’s information,” said Tom Rampone, vice president and general manager, Intel Non-Volatile Memory Solutions Group. “Industry-leading NAND gives Intel the ability to provide the highest quality and most cost-effective solutions to our customers, generation after generation. The Intel-Micron joint venture is a model for the manufacturing industry as we continue to lead the industry in process technology and make quick transitions of our entire fab network to smaller and smaller lithographies.”
The 20nm, 8GB device is sampling now and expected to enter mass production in the second half of 2011. At that time, Intel and Micron also expect to unveil samples of a 16GB device, creating up to 128GBs of capacity in a single solid-state storage solution that is smaller than a U.S. postage stamp.
New 64 Gigabit (Gb) NAND flash die from Intel Micron Flash Technologies – Intel and Micron deliver the industry’s smallest, most advanced NAND flash process technology at 20nm. Shown is a 64Gb, or 8 Gigabyte (GB), die measuring just 118mm2. The 64Gb Multi-Level Cell (MLC) NAND device provides high capacity for smartphones, tablets, SSDs and more.
Comparison of two 32Gb 34nm die versus one 64Gb on 25nm and 20nm process from IMFT – This photo shows a comparison of two 32 Gigabit (Gb) Intel Micron Flash Technologies (IMFT) 34nm die versus one 64Gb, or 8 Gigabyte (GB), die on 25nm and new 20nm processes. Shrinking NAND lithography is the most cost-effective method for increasing fab output and reducing die cost. Shrinking from 25nm to 20nm process will provide an approximately 50 percent more gigabyte capacity from IMFT factories when compared to current technology. The new 20nm process maintains similar performance and endurance as the previous generation 25nm NAND technology.
Intel, Micron First to Sample 3-Bit-Per-Cell NAND Flash Memory on Industry-Leading 25-Nanometer Silicon Process Technology [News story by Intel, Apr 17, 2010]
Intel Corporation and Micron Technology Inc. today announced the delivery of 3-bit-per-cell (3bpc) NAND flash memory on 25-nanometer (nm) process technology, producing the industry’s highest capacity, smallest NAND device. The companies have sent initial product samples to select customers. Intel and Micron expect to be in full production by the end of the year.
The new 64-gigabit (Gb) 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets. Flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as digital cameras, portable media players, digital camcorders and all types of personal computers. These markets are under constant pressure to provide higher capacities at low prices.
Designed by the IM Flash Technologies (IMFT) NAND flash joint venture, the 64-Gb, or 8 gigabyte (GB), 25nm lithography stores three bits of information per cell, rather than the traditional one bit (single-level cell) or two bits (multi-level cell). The industry also refers to 3bpc as triple-level cell (TLC.)
The device is more than 20 percent smaller than the same capacity of Intel and Micron’s 25nm MLC, which is currently the smallest single 8GB device in production today. Small form-factor flash memory is especially important for consumer end-product flash cards given their intrinsic compact design. The die measures 131mm2and comes in an industry-standard TSOP package.
“With January’s introduction of the industry’s smallest die size at 25nm, quickly followed by the move to 3-bit-per-cell on 25nm, we continue to gain momentum and offer customers a compelling set of leadership products,” said Tom Rampone, Intel vice president and general manager of Intel NAND Solutions Group. “Intel plans to use the design and manufacturing leadership of IMFT to deliver higher-density, cost-competitive products to our customers based on the new 8GB TLC 25nm NAND device.”
“As the role of NAND memory continues to escalate in consumer electronics products, we see the early transition to TLC on 25nm as a competitive edge in our growing portfolio of NAND memory products,” said Brian Shirley, vice president of Micron’s NAND Solutions Group. “We are already working to qualify the 8GB TLC NAND flash device within end-product designs, including higher-capacity products from Lexar Media and Micron.”
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